Formation of Al-Cr-N films by an activated reactive evaporation (ARE) method

Y. Ide, K. Inada, T. Nakamura

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The manufacturing conditions of Al-Cr-N films by ARE technique and their properties were studied in this investigation. Optical emission spectroscopy (OES) and mass spectrometry (MS) were powerful tools in monitoring the conditions of plasma to control the process. The Al/N ratios and the Cr/N ratios of Al-Cr-N films analyzed by EPMA showed good correlation to the Al/N ratios and the Cr/N ratios monitored by the OES method respectively. The crystal structure of the Al-Cr-N films changed from AlN phase to Cr2N phase with an increase in Cr content in the films. The resistivity to thermal oxidation of the Al-Cr-N films is superior to that of the usual Ti-Al-N films.

Original languageEnglish
Pages (from-to)265-274
Number of pages10
JournalHigh Temperature Materials and Processes
Volume19
Issue number3
DOIs
Publication statusPublished - 2000 Mar

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Physical and Theoretical Chemistry

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