Formation of a nitrified hafnium oxide buffer layer on silicon substrate and GaN quantum well crystal growth for GaN-Si hybrid optical MEMS

H. Sameshima, M. Wakui, R. Ito, F. R. Hu, Kazuhiro Hane

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We study the growth of GaN crystal on Si substrate by molecular beam epitaxy (MBE), in order to integrate GaN light source and MEMS monolithically. Since the lattice constant of HfN is close to that of GaN (only 0.35% mismatch), the crystal growth of GaN on HfN film is superior. On the other hand, HfO 2 film is a good candidate for waveguide, dielectric and sacrificial layer. In this study, HfO2 film is surface-nitrified by a rf nitrogen plasma source of MBE to generate HfN layer. The morphology of the grown GaN crystal was better on the nitrified HfO2 layer. The photoluminescence (PL) efficiency of GaN quantum well grown on the nitrified HfO2 layer was better than that on Si substrate. As a simple hybrid light device structure, GaN grating on Si substrate was fabricated and the PL intensity from GaN diffraction grating was measured.

Original languageEnglish
Title of host publication2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS
Pages188-189
Number of pages2
DOIs
Publication statusPublished - 2008 Oct 23
Event2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS - Freiburg, Germany
Duration: 2008 Aug 112008 Aug 14

Publication series

Name2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS

Other

Other2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS
CountryGermany
CityFreiburg
Period08/8/1108/8/14

Keywords

  • GaN
  • HfO2
  • Hybrid MEMS
  • Lightning device
  • Quantum well

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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