TY - GEN
T1 - Formation of a nitrified hafnium oxide buffer layer on silicon substrate and GaN quantum well crystal growth for GaN-Si hybrid optical MEMS
AU - Sameshima, H.
AU - Wakui, M.
AU - Ito, R.
AU - Hu, F. R.
AU - Hane, Kazuhiro
PY - 2008/10/23
Y1 - 2008/10/23
N2 - We study the growth of GaN crystal on Si substrate by molecular beam epitaxy (MBE), in order to integrate GaN light source and MEMS monolithically. Since the lattice constant of HfN is close to that of GaN (only 0.35% mismatch), the crystal growth of GaN on HfN film is superior. On the other hand, HfO 2 film is a good candidate for waveguide, dielectric and sacrificial layer. In this study, HfO2 film is surface-nitrified by a rf nitrogen plasma source of MBE to generate HfN layer. The morphology of the grown GaN crystal was better on the nitrified HfO2 layer. The photoluminescence (PL) efficiency of GaN quantum well grown on the nitrified HfO2 layer was better than that on Si substrate. As a simple hybrid light device structure, GaN grating on Si substrate was fabricated and the PL intensity from GaN diffraction grating was measured.
AB - We study the growth of GaN crystal on Si substrate by molecular beam epitaxy (MBE), in order to integrate GaN light source and MEMS monolithically. Since the lattice constant of HfN is close to that of GaN (only 0.35% mismatch), the crystal growth of GaN on HfN film is superior. On the other hand, HfO 2 film is a good candidate for waveguide, dielectric and sacrificial layer. In this study, HfO2 film is surface-nitrified by a rf nitrogen plasma source of MBE to generate HfN layer. The morphology of the grown GaN crystal was better on the nitrified HfO2 layer. The photoluminescence (PL) efficiency of GaN quantum well grown on the nitrified HfO2 layer was better than that on Si substrate. As a simple hybrid light device structure, GaN grating on Si substrate was fabricated and the PL intensity from GaN diffraction grating was measured.
KW - GaN
KW - HfO2
KW - Hybrid MEMS
KW - Lightning device
KW - Quantum well
UR - http://www.scopus.com/inward/record.url?scp=54049111105&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=54049111105&partnerID=8YFLogxK
U2 - 10.1109/OMEMS.2008.4607892
DO - 10.1109/OMEMS.2008.4607892
M3 - Conference contribution
AN - SCOPUS:54049111105
SN - 9781424419180
T3 - 2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS
SP - 188
EP - 189
BT - 2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS
T2 - 2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS
Y2 - 11 August 2008 through 14 August 2008
ER -