Abstract
Advanced large-scale integrated interconnect structure faces a major challenge in forming a thin and conformal diffusion barrier layer. We deposited a Mn oxide layer by thermal chemical vapor deposition (CVD) on Si O2 substrates and investigated deposition behavior and diffusion barrier property. A thin Mn oxide layer was formed with a uniform thickness of 2.6-10 nm depending on deposition temperature between 100 and 400 °C. Heat-treated samples of Cu/CVD-Mn oxide/ Si O2 indicated no interdiffusion at 400 °C for 100 h. The CVD of the Mn oxide layer was found to be an excellent barrier formation process.
Original language | English |
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Article number | 032106 |
Journal | Applied Physics Letters |
Volume | 93 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2008 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)