Formation of a manganese oxide barrier layer with thermal chemical vapor deposition for advanced large-scale integrated interconnect structure

Koji Neishi, Shiro Aki, Kenji Matsumoto, Hiroshi Sato, Hitoshi Itoh, Shigetoshi Hosaka, Junichi Koike

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Advanced large-scale integrated interconnect structure faces a major challenge in forming a thin and conformal diffusion barrier layer. We deposited a Mn oxide layer by thermal chemical vapor deposition (CVD) on Si O2 substrates and investigated deposition behavior and diffusion barrier property. A thin Mn oxide layer was formed with a uniform thickness of 2.6-10 nm depending on deposition temperature between 100 and 400 °C. Heat-treated samples of Cu/CVD-Mn oxide/ Si O2 indicated no interdiffusion at 400 °C for 100 h. The CVD of the Mn oxide layer was found to be an excellent barrier formation process.

Original languageEnglish
Article number032106
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
Publication statusPublished - 2008 Aug 4

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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