Formation of a chiral surface state and interlayer conduction in a bulk quantum Hall system

S. Uji, C. Terakura, M. Takashita, T. Terashima, Hayuyoshi Aoki, J. S. Brooks, S. Tanaka, S. Maki, J. Yamada, S. Nakatsuji

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Resistance measurements have been performed for the bulk quantum Hall system (TMTSF)2AsF6, where TMTSF denotes tetramethyltetraselenafulvalene. The interlayer resistance in the quantum Hall states is found to be independent of both temperature and quantum number at low temperatures. This fact can be ascribed to the formation of the chiral surface state, but the resistivity is much smaller than theoretical prediction. Sharp peaks in the interlayer resistance appear at transition fields between the adjacent quantum Hall states. The results suggest the presence of an intermediate state, which is not necessarily expected from standard theory.

Original languageEnglish
Pages (from-to)1650-1653
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number3
DOIs
Publication statusPublished - 1999 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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