Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process

Akira Wada; Rui Zhang; Shinichi Takagi; Seiji Samukawa

doi:10.1149/05009.1085ecst

Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process

Akira Wada, Rui Zhang, Shinichi Takagi, Seiji Samukawa

Innovative Energy Research Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Germanium dioxide (GeO₂) films with a high-quality interface were formed using a damage-free and low-temperature neutral beam oxidation (NBO) process. Combining the NBO process with hydrogen (H) radical native oxide removal treatment creates a high-quality GeO₂/Ge interface (EOT = 1.7 nm) with an extremely low interface state density (D_it) of less than 1 × 10¹¹ cm^-2eV^-1.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	1085-1090
Number of pages	6
Edition	9
ISBN (Print)	9781607683575
DOIs	https://doi.org/10.1149/05009.1085ecst
Publication status	Published - 2013
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: 2012 Oct 7 → 2012 Oct 12

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	12/10/7 → 12/10/12

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/05009.1085ecst

Cite this

Wada, A., Zhang, R., Takagi, S., & Samukawa, S. (2013). Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 ed., pp. 1085-1090). (ECS Transactions; Vol. 50, No. 9). Electrochemical Society Inc.. https://doi.org/10.1149/05009.1085ecst

Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process. / Wada, Akira; Zhang, Rui; Takagi, Shinichi et al.

SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. Electrochemical Society Inc., 2013. p. 1085-1090 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wada, A, Zhang, R, Takagi, S & Samukawa, S 2013, Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, Electrochemical Society Inc., pp. 1085-1090, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 12/10/7. https://doi.org/10.1149/05009.1085ecst

@inproceedings{2a196a9bb89f4f24a23b451ba9b3bb5f,

title = "Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process",

abstract = "Germanium dioxide (GeO2) films with a high-quality interface were formed using a damage-free and low-temperature neutral beam oxidation (NBO) process. Combining the NBO process with hydrogen (H) radical native oxide removal treatment creates a high-quality GeO2/Ge interface (EOT = 1.7 nm) with an extremely low interface state density (Dit) of less than 1 × 1011 cm-2eV-1.",

author = "Akira Wada and Rui Zhang and Shinichi Takagi and Seiji Samukawa",

year = "2013",

doi = "10.1149/05009.1085ecst",

language = "English",

isbn = "9781607683575",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "9",

pages = "1085--1090",

booktitle = "SiGe, Ge, and Related Compounds 5",

edition = "9",

note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",

}

TY - GEN

T1 - Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process

AU - Wada, Akira

AU - Zhang, Rui

AU - Takagi, Shinichi

AU - Samukawa, Seiji

PY - 2013

Y1 - 2013

N2 - Germanium dioxide (GeO2) films with a high-quality interface were formed using a damage-free and low-temperature neutral beam oxidation (NBO) process. Combining the NBO process with hydrogen (H) radical native oxide removal treatment creates a high-quality GeO2/Ge interface (EOT = 1.7 nm) with an extremely low interface state density (Dit) of less than 1 × 1011 cm-2eV-1.

AB - Germanium dioxide (GeO2) films with a high-quality interface were formed using a damage-free and low-temperature neutral beam oxidation (NBO) process. Combining the NBO process with hydrogen (H) radical native oxide removal treatment creates a high-quality GeO2/Ge interface (EOT = 1.7 nm) with an extremely low interface state density (Dit) of less than 1 × 1011 cm-2eV-1.

UR - http://www.scopus.com/inward/record.url?scp=84885814894&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885814894&partnerID=8YFLogxK

U2 - 10.1149/05009.1085ecst

DO - 10.1149/05009.1085ecst

M3 - Conference contribution

AN - SCOPUS:84885814894

SN - 9781607683575

T3 - ECS Transactions

SP - 1085

EP - 1090

BT - SiGe, Ge, and Related Compounds 5

PB - Electrochemical Society Inc.

T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting

Y2 - 7 October 2012 through 12 October 2012

ER -

Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this