Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process

Akira Wada, Rui Zhang, Shinichi Takagi, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Germanium dioxide (GeO2) films with a high-quality interface were formed using a damage-free and low-temperature neutral beam oxidation (NBO) process. Combining the NBO process with hydrogen (H) radical native oxide removal treatment creates a high-quality GeO2/Ge interface (EOT = 1.7 nm) with an extremely low interface state density (Dit) of less than 1 × 1011 cm-2eV-1.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
Pages1085-1090
Number of pages6
Edition9
DOIs
Publication statusPublished - 2012
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

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