TY - GEN
T1 - Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process
AU - Wada, Akira
AU - Zhang, Rui
AU - Takagi, Shinichi
AU - Samukawa, Seiji
PY - 2013
Y1 - 2013
N2 - Germanium dioxide (GeO2) films with a high-quality interface were formed using a damage-free and low-temperature neutral beam oxidation (NBO) process. Combining the NBO process with hydrogen (H) radical native oxide removal treatment creates a high-quality GeO2/Ge interface (EOT = 1.7 nm) with an extremely low interface state density (Dit) of less than 1 × 1011 cm-2eV-1.
AB - Germanium dioxide (GeO2) films with a high-quality interface were formed using a damage-free and low-temperature neutral beam oxidation (NBO) process. Combining the NBO process with hydrogen (H) radical native oxide removal treatment creates a high-quality GeO2/Ge interface (EOT = 1.7 nm) with an extremely low interface state density (Dit) of less than 1 × 1011 cm-2eV-1.
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U2 - 10.1149/05009.1085ecst
DO - 10.1149/05009.1085ecst
M3 - Conference contribution
AN - SCOPUS:84885814894
SN - 9781607683575
T3 - ECS Transactions
SP - 1085
EP - 1090
BT - SiGe, Ge, and Related Compounds 5
PB - Electrochemical Society Inc.
T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -