Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process

Akira Wada; Rui Zhang; Shinichi Takagi; Seiji Samukawa

doi:10.1149/05009.1085ecst

Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process

Akira Wada, Rui Zhang, Shinichi Takagi, Seiji Samukawa

Innovative Energy Research Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Germanium dioxide (GeO₂) films with a high-quality interface were formed using a damage-free and low-temperature neutral beam oxidation (NBO) process. Combining the NBO process with hydrogen (H) radical native oxide removal treatment creates a high-quality GeO₂/Ge interface (EOT = 1.7 nm) with an extremely low interface state density (D_it) of less than 1 × 10¹¹ cm^-2eV^-1.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Pages	1085-1090
Number of pages	6
Edition	9
DOIs	https://doi.org/10.1149/05009.1085ecst
Publication status	Published - 2012
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: 2012 Oct 7 → 2012 Oct 12

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	12/10/7 → 12/10/12

ASJC Scopus subject areas

Engineering(all)

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10.1149/05009.1085ecst

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Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process. / Wada, Akira; Zhang, Rui; Takagi, Shinichi; Samukawa, Seiji.

SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. 2012. p. 1085-1090 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wada, A, Zhang, R, Takagi, S & Samukawa, S 2012, Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, pp. 1085-1090, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 12/10/7. https://doi.org/10.1149/05009.1085ecst

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title = "Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process",

abstract = "Germanium dioxide (GeO2) films with a high-quality interface were formed using a damage-free and low-temperature neutral beam oxidation (NBO) process. Combining the NBO process with hydrogen (H) radical native oxide removal treatment creates a high-quality GeO2/Ge interface (EOT = 1.7 nm) with an extremely low interface state density (Dit) of less than 1 × 1011 cm-2eV-1.",

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doi = "10.1149/05009.1085ecst",

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AU - Samukawa, Seiji

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AB - Germanium dioxide (GeO2) films with a high-quality interface were formed using a damage-free and low-temperature neutral beam oxidation (NBO) process. Combining the NBO process with hydrogen (H) radical native oxide removal treatment creates a high-quality GeO2/Ge interface (EOT = 1.7 nm) with an extremely low interface state density (Dit) of less than 1 × 1011 cm-2eV-1.

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Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process

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