Formation mechanism of twin boundaries in silicon multicrystals during crystal growth

Kentaro Kutsukake, T. Abe, N. Usami, Kozo Fujiwara, K. Morishita, K. Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Formation mechanism of twin boundaries in silicon multicrystals during crystal growth was investigated by using in-situ observation of the growth interface and following characterization of microstructures of the grown crystal. The crystal growth experiments were performed under two different conditions, which are constant cooling rate and intentionally changed crystal growth rate. Under both the conditions, twin boundaries were more frequently formed when the growth rate drastically increased than when the growth rate was constant in high value. Based on these new findings, formation mechanism of twin boundaries are discussed in terms of formation energy.

Original languageEnglish
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages810-811
Number of pages2
DOIs
Publication statusPublished - 2010 Dec 20
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 2010 Jun 202010 Jun 25

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period10/6/2010/6/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Fingerprint Dive into the research topics of 'Formation mechanism of twin boundaries in silicon multicrystals during crystal growth'. Together they form a unique fingerprint.

Cite this