Formation mechanism of one-dimensional Si Islands on a H/Si(001) surface

Jun Nara, Hiroshi Kajiyama, Tomihiro Hashizume, Yuji Suwa, Seiji Heike, Shinobu Matsuura, Taro Hitosugi, Takahisa Ohno

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    5 Citations (Scopus)

    Abstract

    The formation mechanism of one-dimensional Si islands on a H/Si(001)-(2×1) surface is studied using scanning tunneling microscopy/spectroscopy and first-principles calculations. We observed that one-dimensional islands that are made from dimer chains are formed at the initial growth stages similar to the bare Si(001) surface. It is found that the number of odd-numbered dimer chains is larger than that of even-numbered dimer chains. We propose the growth processes of the two types of growth edges to explain the observation.

    Original languageEnglish
    Article number026102
    JournalPhysical Review Letters
    Volume100
    Issue number2
    DOIs
    Publication statusPublished - 2008 Jan 14

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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  • Cite this

    Nara, J., Kajiyama, H., Hashizume, T., Suwa, Y., Heike, S., Matsuura, S., Hitosugi, T., & Ohno, T. (2008). Formation mechanism of one-dimensional Si Islands on a H/Si(001) surface. Physical Review Letters, 100(2), [026102]. https://doi.org/10.1103/PhysRevLett.100.026102