Formation mechanism of one-dimensional Si Islands on a H/Si(001) surface

Jun Nara, Hiroshi Kajiyama, Tomihiro Hashizume, Yuji Suwa, Seiji Heike, Shinobu Matsuura, Taro Hitosugi, Takahisa Ohno

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)


    The formation mechanism of one-dimensional Si islands on a H/Si(001)-(2×1) surface is studied using scanning tunneling microscopy/spectroscopy and first-principles calculations. We observed that one-dimensional islands that are made from dimer chains are formed at the initial growth stages similar to the bare Si(001) surface. It is found that the number of odd-numbered dimer chains is larger than that of even-numbered dimer chains. We propose the growth processes of the two types of growth edges to explain the observation.

    Original languageEnglish
    Article number026102
    JournalPhysical review letters
    Issue number2
    Publication statusPublished - 2008 Jan 14

    ASJC Scopus subject areas

    • Physics and Astronomy(all)


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