Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth

M. Tokairin, K. Fujiwara, K. Kutsukake, N. Usami, K. Nakajima

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We investigated the formation mechanism of a faceted crystal-melt interface by in situ observation. It was directly proved that a wavy perturbation is introduced into a planar crystal-melt interface and the perturbation results in zigzag facets. Such a facet formation process was observed when growth velocity was high, although planar interfaces were maintained at low growth velocities. It was shown by theoretical analysis that the negative temperature gradient generated by the latent heat of crystallization at high growth velocities amplifies the perturbation and leads to the facet formation.

Original languageEnglish
Article number174108
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number17
DOIs
Publication statusPublished - 2009 Nov 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth'. Together they form a unique fingerprint.

  • Cite this