Formation energy of excess arsenic atoms in n-type GaAs

Jun Ichi Nishizawa, Yutaka Oyama, Kazushi Dezaki

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


We report the first determination of the formation energy of excess-As-atomrelated defects in Te-doped GaAs. The photocapacitance method in the constant-capacitance condition is applied to GaAs:Te prepared by 67-h annealing at 8501100°C under various As vapor pressures followed by rapid cooling. From an Arrhenius plot of the saturating deep-level density at quasi thermal equilibrium under high As vapor pressure, the formation energy of the defect is determined to be 1.16 eV in Te-doped horizontal-Bridgeman-grown GaAs crystals.

Original languageEnglish
Pages (from-to)2555-2558
Number of pages4
JournalPhysical review letters
Issue number20
Publication statusPublished - 1990
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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