Formation energy of excess arsenic atoms in n-type GaAs

Jun Ichi Nishizawa; Yutaka Oyama; Kazushi Dezaki

doi:10.1103/PhysRevLett.65.2555

Formation energy of excess arsenic atoms in n-type GaAs

Jun Ichi Nishizawa, Yutaka Oyama, Kazushi Dezaki

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We report the first determination of the formation energy of excess-As-atomrelated defects in Te-doped GaAs. The photocapacitance method in the constant-capacitance condition is applied to GaAs:Te prepared by 67-h annealing at 8501100°C under various As vapor pressures followed by rapid cooling. From an Arrhenius plot of the saturating deep-level density at quasi thermal equilibrium under high As vapor pressure, the formation energy of the defect is determined to be 1.16 eV in Te-doped horizontal-Bridgeman-grown GaAs crystals.

Original language	English
Pages (from-to)	2555-2558
Number of pages	4
Journal	Physical review letters
Volume	65
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevLett.65.2555
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.65.2555

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abstract = "We report the first determination of the formation energy of excess-As-atomrelated defects in Te-doped GaAs. The photocapacitance method in the constant-capacitance condition is applied to GaAs:Te prepared by 67-h annealing at 8501100°C under various As vapor pressures followed by rapid cooling. From an Arrhenius plot of the saturating deep-level density at quasi thermal equilibrium under high As vapor pressure, the formation energy of the defect is determined to be 1.16 eV in Te-doped horizontal-Bridgeman-grown GaAs crystals.",

author = "Nishizawa, {Jun Ichi} and Yutaka Oyama and Kazushi Dezaki",

year = "1990",

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T1 - Formation energy of excess arsenic atoms in n-type GaAs

AU - Nishizawa, Jun Ichi

AU - Oyama, Yutaka

AU - Dezaki, Kazushi

PY - 1990

Y1 - 1990

N2 - We report the first determination of the formation energy of excess-As-atomrelated defects in Te-doped GaAs. The photocapacitance method in the constant-capacitance condition is applied to GaAs:Te prepared by 67-h annealing at 8501100°C under various As vapor pressures followed by rapid cooling. From an Arrhenius plot of the saturating deep-level density at quasi thermal equilibrium under high As vapor pressure, the formation energy of the defect is determined to be 1.16 eV in Te-doped horizontal-Bridgeman-grown GaAs crystals.

AB - We report the first determination of the formation energy of excess-As-atomrelated defects in Te-doped GaAs. The photocapacitance method in the constant-capacitance condition is applied to GaAs:Te prepared by 67-h annealing at 8501100°C under various As vapor pressures followed by rapid cooling. From an Arrhenius plot of the saturating deep-level density at quasi thermal equilibrium under high As vapor pressure, the formation energy of the defect is determined to be 1.16 eV in Te-doped horizontal-Bridgeman-grown GaAs crystals.

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DO - 10.1103/PhysRevLett.65.2555

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JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

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ER -

Formation energy of excess arsenic atoms in n-type GaAs

Abstract

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