Abstract
We report the first determination of the formation energy of excess-As-atomrelated defects in Te-doped GaAs. The photocapacitance method in the constant-capacitance condition is applied to GaAs:Te prepared by 67-h annealing at 8501100°C under various As vapor pressures followed by rapid cooling. From an Arrhenius plot of the saturating deep-level density at quasi thermal equilibrium under high As vapor pressure, the formation energy of the defect is determined to be 1.16 eV in Te-doped horizontal-Bridgeman-grown GaAs crystals.
Original language | English |
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Pages (from-to) | 2555-2558 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 65 |
Issue number | 20 |
DOIs | |
Publication status | Published - 1990 Jan 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)