A metallic Mn layer was successfully formed on a porous SiOC (Black Diamond-III, BD-III) substrate at 300 °C by chemical vapor deposition (CVD) using a newly developed Mn precursor, bis[1-(tert-butylamide)-2- dimethylaminoethane-N,N']Mn. A thin layer of Mn silicate was also formed at the interface between the metallic Mn and the porous SiOC. The formation of the metallic Mn layer was a thermally activated process with the activation energy of 161.2 kJ&mol-1. The metallic Mn layer enhanced the adhesion and wettability of Cu on the BD-III substrates.
ASJC Scopus subject areas
- Physics and Astronomy(all)