Formation and structural investigation of MnSb dots on S-passivated GaAs(0 0 1) substrates

M. Mizuguchi, H. Akinaga, K. Ono, M. Oshima

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

We have succeeded in fabricating nanoscale manganese antimonide (MnSb) dots on GaAs substrates by molecular beam epitaxy. Sulfur passivated surfaces were used to decrease the surface energy and to form MnSb dots on the substrate. Morphologies of the dots were investigated by atomic force microscopy. Different growth modes which arose from a difference in growth temperatures were observed.

Original languageEnglish
Pages (from-to)552-555
Number of pages4
JournalJournal of Crystal Growth
Volume209
Issue number2-3
DOIs
Publication statusPublished - 2000 Feb
Externally publishedYes
EventThe 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn
Duration: 1999 Jul 281999 Jul 30

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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