TY - JOUR
T1 - Formation and structural investigation of MnSb dots on S-passivated GaAs(0 0 1) substrates
AU - Mizuguchi, M.
AU - Akinaga, H.
AU - Ono, K.
AU - Oshima, M.
N1 - Funding Information:
This work, partly supported by the New Energy and Industrial Technology Development Organization (NEDO), was performed in JRCAT under the joint research agreement between NAIR and the Angstrom Technology Partnership (ATP).
PY - 2000/2
Y1 - 2000/2
N2 - We have succeeded in fabricating nanoscale manganese antimonide (MnSb) dots on GaAs substrates by molecular beam epitaxy. Sulfur passivated surfaces were used to decrease the surface energy and to form MnSb dots on the substrate. Morphologies of the dots were investigated by atomic force microscopy. Different growth modes which arose from a difference in growth temperatures were observed.
AB - We have succeeded in fabricating nanoscale manganese antimonide (MnSb) dots on GaAs substrates by molecular beam epitaxy. Sulfur passivated surfaces were used to decrease the surface energy and to form MnSb dots on the substrate. Morphologies of the dots were investigated by atomic force microscopy. Different growth modes which arose from a difference in growth temperatures were observed.
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U2 - 10.1016/S0022-0248(99)00618-1
DO - 10.1016/S0022-0248(99)00618-1
M3 - Conference article
AN - SCOPUS:0034140257
VL - 209
SP - 552
EP - 555
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 2-3
T2 - The 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques
Y2 - 28 July 1999 through 30 July 1999
ER -