TY - JOUR
T1 - Formation and stability of metallic silicides during ion-beam-mixing in the systems of Mo/Si and Ti/Si
AU - Arimoto, Fumiko
AU - Takeda, Mitsuhiro
AU - Suda, Takanori
AU - Watanabe, Seiichi
AU - Ohnuki, Somei
AU - Takahashi, Heishichiro
AU - Abe, Hiroaki
AU - Naramoto, Hiroshi
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1999/5
Y1 - 1999/5
N2 - In order to form the silicide at relatively low temperature, ion-beam-mixing was applied to Mo/Si and Ti/Si systems in a temperature range from room temperature to 473 K. After the irradiation of 1 MeV Si+, the cross-sectional specimens were examined by transmission electron microscopy and X-ray microanalysis. Crystalline silicide formation was achieved only in Mo/Si system irradiated to high dose at each temperature. The evaluation of interdiffusion coefficient indicated that the diffusion is predominant in the ion-beam-mixing process. The nucleation process of silicide and the phase stability are discussed.
AB - In order to form the silicide at relatively low temperature, ion-beam-mixing was applied to Mo/Si and Ti/Si systems in a temperature range from room temperature to 473 K. After the irradiation of 1 MeV Si+, the cross-sectional specimens were examined by transmission electron microscopy and X-ray microanalysis. Crystalline silicide formation was achieved only in Mo/Si system irradiated to high dose at each temperature. The evaluation of interdiffusion coefficient indicated that the diffusion is predominant in the ion-beam-mixing process. The nucleation process of silicide and the phase stability are discussed.
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U2 - 10.2320/matertrans1989.40.408
DO - 10.2320/matertrans1989.40.408
M3 - Article
AN - SCOPUS:0032648782
VL - 40
SP - 408
EP - 411
JO - [No source information available]
JF - [No source information available]
IS - 5
ER -