Formation and stability of metallic silicides during ion-beam-mixing in the systems of Mo/Si and Ti/Si

Fumiko Arimoto, Mitsuhiro Takeda, Takanori Suda, Seiichi Watanabe, Somei Ohnuki, Heishichiro Takahashi, Hiroaki Abe, Hiroshi Naramoto

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In order to form the silicide at relatively low temperature, ion-beam-mixing was applied to Mo/Si and Ti/Si systems in a temperature range from room temperature to 473 K. After the irradiation of 1 MeV Si+, the cross-sectional specimens were examined by transmission electron microscopy and X-ray microanalysis. Crystalline silicide formation was achieved only in Mo/Si system irradiated to high dose at each temperature. The evaluation of interdiffusion coefficient indicated that the diffusion is predominant in the ion-beam-mixing process. The nucleation process of silicide and the phase stability are discussed.

Original languageEnglish
Pages (from-to)408-411
Number of pages4
JournalUnknown Journal
Volume40
Issue number5
DOIs
Publication statusPublished - 1999 May

ASJC Scopus subject areas

  • Engineering(all)

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