In order to form the silicide at relatively low temperature, ion-beam-mixing was applied to Mo/Si and Ti/Si systems in a temperature range from room temperature to 473 K. After the irradiation of 1 MeV Si+, the cross-sectional specimens were examined by transmission electron microscopy and X-ray microanalysis. Crystalline silicide formation was achieved only in Mo/Si system irradiated to high dose at each temperature. The evaluation of interdiffusion coefficient indicated that the diffusion is predominant in the ion-beam-mixing process. The nucleation process of silicide and the phase stability are discussed.
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