Formation and property of yttrium and yttrium suicide films as low Schottcky barrier material for n-type silicon

Tatsunori Isogai, Hiroaki Tanaka, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

As the candidate for the low Schottky barrier material for n-type silicon, physical and electrical properties of yttrium and its suicide were investigated. In order to prevent both Si surface and easily-oxidized low work function metals from being oxidized, N2 sealed cleaning and transfer system and capping layer on low work function metals were employed. Fabricated Al/Y/p-type silicon Schottky barrier diode showed an excellent n- value. The extracted Schottky barrier height for electrons of yttrium suicide is as low as 0.3 eV. This result can be applied to form low contact resistivity silicide/n-type silicon contact, and contribute to lower the parasitic source drain series resistance of metal-oxide-semiconductor devices.

Original languageEnglish
Pages (from-to)3138-3141
Number of pages4
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25

Keywords

  • Contact resistance
  • Diode
  • Low work function metals
  • Schottky barrier
  • Yttrium
  • Yttrium silicide

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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