Formation and optical properties of Cr-doped CdTe/ZnTe nanostructures on ZnTe substrates by molecular beam epitaxy

K. Godo, J. H. Chang, H. Makino, T. Hanada, H. Goto, T. Yao, T. Goto

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

We study the growth and optical properties of Cr-doped CdTe/ZnTe nanostructures grown on ZnTe (001) substrates by molecular beam epitaxy. In-situ reflection high-energy electron diffraction is used to study the growth processes and strain relaxation behaviors of Cr-doped CdTe quantum dots (QDs). After 4.5 ML deposition, the surface lattice parameter begins to increase remarkably, which indicates that the two-dimensional growth mode is terminated and the CdTe layer grows in a three-dimensional mode. Low temperature photoluminescence spectra of Cr-doped CdTe QDs (Tcr = 900 °C) show a broad emision. With increasing the Cr cell temperature above 1000 °C, the luminescence from CdTe QDs disappears and the broad luminescence at around 1.6 eV becomes dominant.

Original languageEnglish
Pages (from-to)1242-1245
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number4
DOIs
Publication statusPublished - 2003
Event2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
Duration: 2002 Sep 302002 Oct 3

ASJC Scopus subject areas

  • Condensed Matter Physics

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