Formation and evolution of strain-induced self-assembled dot

Takashi Hanada, Takafumi Yao

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

Diffusion length of adatoms on surface during epitaxy is finite and strongly depends on growth temperature and growth rate. Formation and development process of InAs/GaAs(001) self-assembled dot is studied by minimizing strain plus surface energy of a dot, wetting layer, and substrate system within a finite area limited by the surface diffusion.

Original languageEnglish
Pages (from-to)216-218
Number of pages3
JournalMicroelectronics Journal
Volume36
Issue number3-6
DOIs
Publication statusPublished - 2005 Mar 1

Keywords

  • Diffusion length
  • Energetics
  • Lattice misfit
  • Self-assembled dot

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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