Formation and evolution of misoriented grains in a-plane oriented gallium nitride layers

Yuki Tokumoto, Hyun Jae Lee, Yutaka Ohno, Takafumi Yao, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review


Annealed low-temperature GaN layers grown on r-plane sapphire substrates were examined by X-ray diffraction pole figure measurements. The GaN layers were mainly a-plane oriented, in which misoriented grains with four different orientations were detected. The c-axes of the misoriented grains are tilted from the surface normal by about 35°, which are along the bonds not parallel to the c-axis of the a-plane oriented layers. There was a difference among the peak intensities corresponding to the c-planes of the misoriented grains with the four different orientations. Considering the difference, the relative amount of misoriented grains with each orientation can be predicted. The evolution of the misoriented grains is expected to be controlled by the major polarity.

Original languageEnglish
Pages (from-to)1881-1884
Number of pages4
JournalMaterials Transactions
Issue number11
Publication statusPublished - 2012


  • Gallium nitride
  • Thin films
  • X-ray diffraction pole figure measurements

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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