Formation and characterization of sub-nanometer scale cF8 Ge precipitates in Si-based amorphous matrix

Dmitri V. Louzguine-Luzgin, Parmanand Sharma, Mikio Fukuhara, Andriy Dmytruk, Akihisa Inoue

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Sub-nanometer size cF8 Ge clusters are found to be homogeneously distributed within the Si-Mn amorphous matrix of the SiGeMn thin films deposited by sputtering technique on silicon substrate. The existence of such clusters is observed by XRD and TEM. The electrical conduction in such a composite film seems to be governed by the variable range hopping. Such a two-phase semiconductive composite material with nearly atomic-scale phase separation may be considered as a suitable functional material for nano-electronics and nano-electromechanical systems.

Original languageEnglish
Pages (from-to)5865-5869
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume9
Issue number10
DOIs
Publication statusPublished - 2009 Oct

Keywords

  • Amorphous alloys
  • Nanomaterial
  • Semiconductors

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Formation and characterization of sub-nanometer scale cF8 Ge precipitates in Si-based amorphous matrix'. Together they form a unique fingerprint.

Cite this