Force/displacement detection using quantum transport in InAsAlGaSb two-dimensional heterostructures

H. Yamaguchi, Y. Hirayama, S. Miyashita, S. Ishihara

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We fabricated a piezoresistive microelectromechanical cantilever that contains an InAs Al0.5 Ga0.5 Sb quantum well and measured the piezoresistance as a function of perpendicular magnetic field at 2.0 K. The magneto- piezoresistance shows the feature of Schvnikov-de Haas oscillation, indicating a strong quantum effect on the piezoresistance. At the magnetic field that gives the largest piezoresistance, displacement and force sensitivities of 10-11 mHz and 10-12 NHz, respectively, were obtained.

Original languageEnglish
Article number052106
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2005 Jan 31
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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