Force/displacement detection using quantum effects in InAs/Al 0.5Ga0.5Sb two-dimensional electron systems

H. Yamaguchi, S. Miyashita, Y. Hirayama

Research output: Contribution to journalConference articlepeer-review

Abstract

We have fabricated micromechanical piezoresistive InAs/Al 0.5Ga0.5Sb cantilevers and the piezoresitace was measured at liquid helium temperature under a magnetic field. Depending on the electron mobility of the InAs films, we observed conductance fluctuation and Schbnikov-de Haas oscillation, which was caused by the quantum effects, in the piezoresistance. At appropriately choosing the magnetic field, we obtained enhanced force and displacement sensitivity of 10-12N/√Hz and 10-11 m/√Hz, respectively.

Original languageEnglish
Pages (from-to)187-192
Number of pages6
JournalInstitute of Physics Conference Series
Volume184
Publication statusPublished - 2005 Dec 1
Externally publishedYes
Event31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
Duration: 2004 Sep 122004 Dec 16

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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