Focused ion beam lithography with transition metal oxide resists

Nobuyoshi Koshida; Koichi Ohtaka; Masanobu Ando; Masanori Komuro; Nobufumi Atoda

doi:10.1143/JJAP.28.2090

Focused ion beam lithography with transition metal oxide resists

Nobuyoshi Koshida, Koichi Ohtaka, Masanobu Ando, Masanori Komuro, Nobufumi Atoda

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The microlithographic behavior of inorganic resists for focused ion beam (FIB) has been studied for thin amorphous films of WO₃, MoO₃, V₂O₅, a mixture thereof and Ta₂O₅ using 20∼70 keV Ga^+; FIB. The exposure characteristics, composition at the film surfaces and electrical properties have been investigated in order to evaluate the mechanism of the microlithographic behavior. A study of line exposure indicates that the resolution of these resists is determined by the FIB diameter owing to their high contrast. It is also demonstrated that this resist work is directly applicable to fine patterning of W and Mo.

Original language	English
Pages (from-to)	2090-2094
Number of pages	5
Journal	Japanese journal of applied physics
Volume	28
Issue number	10 R
DOIs	https://doi.org/10.1143/JJAP.28.2090
Publication status	Published - 1989 Oct
Externally published	Yes

Keywords

Fine patterning
Focused ion beam
Inorganic resist
Ion beam modification
Microlithography
Refractory metal
Thin amorphous film
Transition metal oxide

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.28.2090

Cite this

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title = "Focused ion beam lithography with transition metal oxide resists",

abstract = "The microlithographic behavior of inorganic resists for focused ion beam (FIB) has been studied for thin amorphous films of WO3, MoO3, V2O5, a mixture thereof and Ta2O5 using 20∼70 keV Ga+; FIB. The exposure characteristics, composition at the film surfaces and electrical properties have been investigated in order to evaluate the mechanism of the microlithographic behavior. A study of line exposure indicates that the resolution of these resists is determined by the FIB diameter owing to their high contrast. It is also demonstrated that this resist work is directly applicable to fine patterning of W and Mo.",

keywords = "Fine patterning, Focused ion beam, Inorganic resist, Ion beam modification, Microlithography, Refractory metal, Thin amorphous film, Transition metal oxide",

author = "Nobuyoshi Koshida and Koichi Ohtaka and Masanobu Ando and Masanori Komuro and Nobufumi Atoda",

year = "1989",

month = oct,

doi = "10.1143/JJAP.28.2090",

language = "English",

volume = "28",

pages = "2090--2094",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10 R",

}

TY - JOUR

T1 - Focused ion beam lithography with transition metal oxide resists

AU - Koshida, Nobuyoshi

AU - Ohtaka, Koichi

AU - Ando, Masanobu

AU - Komuro, Masanori

AU - Atoda, Nobufumi

PY - 1989/10

Y1 - 1989/10

N2 - The microlithographic behavior of inorganic resists for focused ion beam (FIB) has been studied for thin amorphous films of WO3, MoO3, V2O5, a mixture thereof and Ta2O5 using 20∼70 keV Ga+; FIB. The exposure characteristics, composition at the film surfaces and electrical properties have been investigated in order to evaluate the mechanism of the microlithographic behavior. A study of line exposure indicates that the resolution of these resists is determined by the FIB diameter owing to their high contrast. It is also demonstrated that this resist work is directly applicable to fine patterning of W and Mo.

AB - The microlithographic behavior of inorganic resists for focused ion beam (FIB) has been studied for thin amorphous films of WO3, MoO3, V2O5, a mixture thereof and Ta2O5 using 20∼70 keV Ga+; FIB. The exposure characteristics, composition at the film surfaces and electrical properties have been investigated in order to evaluate the mechanism of the microlithographic behavior. A study of line exposure indicates that the resolution of these resists is determined by the FIB diameter owing to their high contrast. It is also demonstrated that this resist work is directly applicable to fine patterning of W and Mo.

KW - Fine patterning

KW - Focused ion beam

KW - Inorganic resist

KW - Ion beam modification

KW - Microlithography

KW - Refractory metal

KW - Thin amorphous film

KW - Transition metal oxide

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DO - 10.1143/JJAP.28.2090

M3 - Article

AN - SCOPUS:0024751801

SN - 0021-4922

VL - 28

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EP - 2094

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 10 R

ER -

Focused ion beam lithography with transition metal oxide resists

Abstract

Keywords

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