Flux pinning properties of nano-rods comprised of BaMO3 (M = Zr, Sn) in REBa2Cu3O7-δ thin films prepared by PLD method

T. Sueyoshi, K. Yonekura, R. Kajita, T. Fujiyoshi, M. Mukaida, R. Teranishi, H. Kai, K. Matsumoto, Y. Yoshida, A. Ichinose, S. Horii, S. Awaji, K. Watanabe

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4 Citations (Scopus)


We investigated the flux pinning properties of nano-rods comprised of BaZrO3 and BaSnO3 in REBa2Cu3O7-δ (REBCO, RE: rare earth elements) thin films. The doping amounts of BaZrO3 in YBa2Cu3O7-δ thin films and BaSnO3 in ErBa2Cu3O7-δ thin films were varied with 0-3.5 wt% and 2.0-4.0 wt%, respectively. The in-field critical current density of 1.5 wt%-BaZrO3-doped YBa2Cu3O7-δ film was higher than those of any other samples measured in this study. The α values in the relation of Jc-B are 0.2-0.3 for the BaZrO3- and BaSnO3-doped films. This fact shows the introduction of nano-rods is effective for the less magnetic field dependence of Jc. As one of the important results, it was found that the introduction of nano-rods caused the peak or kink in the magnetic field dependence of the pinning parameter m which was derived from the scaling of current-voltage characteristics. This phenomenon is the sign of the flux pinning due to the one-dimensional pinning centers. The peak fields of the BaSnO3-doped films were slightly lower than those of the BaZrO3-doped films, though the dope levels of the BaSnO3-doped films were higher. This suggests that the diameter of BaSnO3 nano-rods is larger than that of BaZrO3 ones.

Original languageEnglish
Pages (from-to)1396-1399
Number of pages4
JournalPhysica C: Superconductivity and its applications
Issue number15-20
Publication statusPublished - 2009 Oct 15


  • Artificial pinning centers
  • Critical current density
  • Flux pinning
  • Nano-structures

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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