Flux-mediated epitaxy: General application in vapor phase epitaxy to single crystal quality of complex oxide films

Y. Matsumoto, R. Takahashi, H. Koinuma

Research output: Contribution to journalConference article

16 Citations (Scopus)

Abstract

We propose a general term flux-mediated epitaxy (FME) to single crystal quality of complex oxide thin films in vapor-phase epitaxy. The key is a flux, which is frequently used in a bulk process for lowering a process temperature and suppressing incongruent melt. The successful application of the flux to the bulk single crystal growth allows us to expect a similar benefit even in the case of vapor-phase epitaxy. In this paper, we discuss on the capability of this general concept 'FME' for controlling phases and crystallinity of the complex oxide films, showing some examples such as optical, ferromagnetic oxide and high-Tc superconductor.

Original languageEnglish
Pages (from-to)325-330
Number of pages6
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
Publication statusPublished - 2005 Feb 15
Externally publishedYes

Keywords

  • A1. Phase equilibria
  • A2. Single crystal growth
  • A3. Flux
  • A3. Pulsed laser deposition
  • A3. Vapor phase epitaxy
  • B1. Oxides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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