Flux-flow resonant current steps in intrinsic Josephson junctions on Bi2Sr2CaCu2O8 single crystal

H. B. Wang, T. Tachiki, Y. Aruga, Y. Mizugaki, J. Chen, K. Nakajima, T. Yamashita, P. H. Wu

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

A mesa with a-b plane dimensions of 12 μm × 12 μm was patterned on Bi2Sr2CaCu2O8 single crystal, after which two separate electrical contacts were carefully fabricated on the top of the mesa to ensure a standard four-probe arrangement. With contact resistance excluded, the measured current-voltage (I-V) curves featured high voltage resolution. Voltage jumps up to 20 mV and remarkable hysteresis at 4.2 K indicated typical superconductor-insulator-superconductor properties. A few sharp current steps started to manifest themselves clearly when a magnetic field of about 10 kOe was applied parallel to the a-b plane. Carefully studied were the dependences of the current steps on the magnetic fields and the operating temperatures. We attributed the field-induced steps to the flux-flow resonances, and the multisteps implied different modes existing in the stacked intrinsic junctions. The voltage region at which the steps occurred was of the order of millivolts, indicating possible high-frequency applications at mm and sub-mm wavebands.

Original languageEnglish
Pages (from-to)1004-1006
Number of pages3
JournalSuperconductor Science and Technology
Volume12
Issue number11
DOIs
Publication statusPublished - 1999 Nov 1
EventProceedings of the 1999 International Superconductive Electronics Conference - Berkeley, CA, USA
Duration: 1999 Jun 211999 Jun 25

ASJC Scopus subject areas

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Wang, H. B., Tachiki, T., Aruga, Y., Mizugaki, Y., Chen, J., Nakajima, K., Yamashita, T., & Wu, P. H. (1999). Flux-flow resonant current steps in intrinsic Josephson junctions on Bi2Sr2CaCu2O8 single crystal. Superconductor Science and Technology, 12(11), 1004-1006. https://doi.org/10.1088/0953-2048/12/11/392