Fluorine etching on the Si(1 1 1)-7 × 7 surfaces using fluorinated fullerene

Y. Fujikawa, J. T. Sadowski, K. F. Kelly, K. S. Nakayama, T. Nagao, T. Sakurai

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Fluorine etching on the Si(1 1 1)-7 × 7 surfaces using fluorinated fullerene molecules as a fluorine source has been investigated. At room temperature, adsorbed fluorinated fullerene molecules reacted with the Si(1 1 1)-7 × 7 surface to create a localized distribution of fluorine on the surface. Nanoscale etch pits were created by annealing at 300 °C, due to the adsorption of the fluorine localized around the C60Fx molecules. Annealing at 400 °C resulted in the delocalized fluorine distribution on the surface and healing of the etch pits, due to the enhancement of the diffusion of both the fluorine and silicon atoms. Subsequent annealing at 500 °C led to desorption of SiF2 reactants formed on the surface. The fluorine diffusion process was found to be an elemental process in the etching because the diffusion of adsorbed fluorines is a key for the formation of the SiF2 species and their subsequent desorption.

Original languageEnglish
Pages (from-to)43-48
Number of pages6
JournalSurface Science
Volume521
Issue number1-2
DOIs
Publication statusPublished - 2002 Dec 10

Keywords

  • Etching
  • Fullerenes
  • Halogens
  • Scanning tunneling microscopy
  • Silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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