Abstract
The diffusion process of fluorine (F) atoms on the Si (111) - (7×7) surface is investigated using high-temperature scanning tunneling microscopy. The kinetic parameters of F hopping agree well with those of the diffusing silicon (Si) atoms, which implies that of all reaction processes, the Si diffusion serves as the rate-determining one. Deposition of Si on the surface is found to enhance F hopping, which supports the above-mentioned observation. Theory reveals that the replacement of F adsorption sites by diffusing Si atoms is the key process in the diffusion mechanism.
| Original language | English |
|---|---|
| Article number | 234710 |
| Journal | Journal of Chemical Physics |
| Volume | 129 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2008 Dec 29 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry
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Fujikawa, Y., Kuwano, S., Nakayama, K. S., Nagao, T., Sadowski, J. T., Bahktizin, R. Z., Sakurai, T., Asari, Y., Nara, J., & Ohno, T. (2008). Fluorine diffusion assisted by diffusing silicon on the Si (111) - (7×7) surface. Journal of Chemical Physics, 129(23), [234710]. https://doi.org/10.1063/1.3039873