Fluorine diffusion assisted by diffusing silicon on the Si (111) - (7×7) surface

Y. Fujikawa; S. Kuwano; K. S. Nakayama; T. Nagao; J. T. Sadowski; R. Z. Bahktizin; Toshio Sakurai; Y. Asari; J. Nara; T. Ohno

doi:10.1063/1.3039873

Fluorine diffusion assisted by diffusing silicon on the Si (111) - (7×7) surface

Y. Fujikawa, S. Kuwano, K. S. Nakayama, T. Nagao, J. T. Sadowski, R. Z. Bahktizin, Toshio Sakurai, Y. Asari, J. Nara, T. Ohno

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The diffusion process of fluorine (F) atoms on the Si (111) - (7×7) surface is investigated using high-temperature scanning tunneling microscopy. The kinetic parameters of F hopping agree well with those of the diffusing silicon (Si) atoms, which implies that of all reaction processes, the Si diffusion serves as the rate-determining one. Deposition of Si on the surface is found to enhance F hopping, which supports the above-mentioned observation. Theory reveals that the replacement of F adsorption sites by diffusing Si atoms is the key process in the diffusion mechanism.

Original language	English
Article number	234710
Journal	Journal of Chemical Physics
Volume	129
Issue number	23
DOIs	https://doi.org/10.1063/1.3039873
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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title = "Fluorine diffusion assisted by diffusing silicon on the Si (111) - (7×7) surface",

abstract = "The diffusion process of fluorine (F) atoms on the Si (111) - (7×7) surface is investigated using high-temperature scanning tunneling microscopy. The kinetic parameters of F hopping agree well with those of the diffusing silicon (Si) atoms, which implies that of all reaction processes, the Si diffusion serves as the rate-determining one. Deposition of Si on the surface is found to enhance F hopping, which supports the above-mentioned observation. Theory reveals that the replacement of F adsorption sites by diffusing Si atoms is the key process in the diffusion mechanism.",

author = "Y. Fujikawa and S. Kuwano and Nakayama, {K. S.} and T. Nagao and Sadowski, {J. T.} and Bahktizin, {R. Z.} and Toshio Sakurai and Y. Asari and J. Nara and T. Ohno",

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T1 - Fluorine diffusion assisted by diffusing silicon on the Si (111) - (7×7) surface

AU - Fujikawa, Y.

AU - Kuwano, S.

AU - Nakayama, K. S.

AU - Nagao, T.

AU - Sadowski, J. T.

AU - Bahktizin, R. Z.

AU - Sakurai, Toshio

AU - Asari, Y.

AU - Nara, J.

AU - Ohno, T.

PY - 2008

Y1 - 2008

N2 - The diffusion process of fluorine (F) atoms on the Si (111) - (7×7) surface is investigated using high-temperature scanning tunneling microscopy. The kinetic parameters of F hopping agree well with those of the diffusing silicon (Si) atoms, which implies that of all reaction processes, the Si diffusion serves as the rate-determining one. Deposition of Si on the surface is found to enhance F hopping, which supports the above-mentioned observation. Theory reveals that the replacement of F adsorption sites by diffusing Si atoms is the key process in the diffusion mechanism.

AB - The diffusion process of fluorine (F) atoms on the Si (111) - (7×7) surface is investigated using high-temperature scanning tunneling microscopy. The kinetic parameters of F hopping agree well with those of the diffusing silicon (Si) atoms, which implies that of all reaction processes, the Si diffusion serves as the rate-determining one. Deposition of Si on the surface is found to enhance F hopping, which supports the above-mentioned observation. Theory reveals that the replacement of F adsorption sites by diffusing Si atoms is the key process in the diffusion mechanism.

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SN - 0021-9606

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Fluorine diffusion assisted by diffusing silicon on the Si (111) - (7×7) surface

Abstract

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