Abstract
The diffusion process of fluorine (F) atoms on the Si (111) - (7×7) surface is investigated using high-temperature scanning tunneling microscopy. The kinetic parameters of F hopping agree well with those of the diffusing silicon (Si) atoms, which implies that of all reaction processes, the Si diffusion serves as the rate-determining one. Deposition of Si on the surface is found to enhance F hopping, which supports the above-mentioned observation. Theory reveals that the replacement of F adsorption sites by diffusing Si atoms is the key process in the diffusion mechanism.
Original language | English |
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Article number | 234710 |
Journal | Journal of Chemical Physics |
Volume | 129 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2008 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry