Fluorine diffusion assisted by diffusing silicon on the Si (111) - (7×7) surface

Y. Fujikawa, S. Kuwano, K. S. Nakayama, T. Nagao, J. T. Sadowski, R. Z. Bahktizin, Toshio Sakurai, Y. Asari, J. Nara, T. Ohno

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5 Citations (Scopus)


The diffusion process of fluorine (F) atoms on the Si (111) - (7×7) surface is investigated using high-temperature scanning tunneling microscopy. The kinetic parameters of F hopping agree well with those of the diffusing silicon (Si) atoms, which implies that of all reaction processes, the Si diffusion serves as the rate-determining one. Deposition of Si on the surface is found to enhance F hopping, which supports the above-mentioned observation. Theory reveals that the replacement of F adsorption sites by diffusing Si atoms is the key process in the diffusion mechanism.

Original languageEnglish
Article number234710
JournalJournal of Chemical Physics
Issue number23
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry


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