Abstract
Fluorinated amorphous carbon thin films (a-C:F) for use as low-dielectric-constant interlayer dielectrics were deposited by helicon-wave plasma-enhanced chemical vapor deposition using fluorocarbon compounds as a source material. The a-C:F films could be grown from C4F8 at a high deposition rate (above 400 nm/min) and they were thermally stable up to 300 °C. The addition of bias power to the substrate made it possible to completely fill gaps in the wiring (space 0.35 μm, height 0.65 μm) with the a-C:F film. To protect the a-C:F film during further processing, we deposited a SiO2 film to add mechanical strength and resistance to the oxygen plasma used to remove resist materials. The adhesion between the a-C:F and SiO2 films was dramatically improved by inserting an adhesion promoter consisting of a-C:H and Si-rich SiO2.
Original language | English |
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Pages (from-to) | 165-170 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 443 |
Publication status | Published - 1997 Jan 1 |
Externally published | Yes |
Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 6 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering