Fluorinated amorphous carbon thin films grown from C4F8 for multilevel interconnections of integrated circuits

Kazuhiko Endo, Toru Tatsumi, Yoshihisa Matsubara, Tadahiko Horiuchi

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


Fluorinated amorphous carbon thin films (a-C:F) for use as low-dielectric-constant interlayer dielectrics were deposited by helicon-wave plasma-enhanced chemical vapor deposition using fluorocarbon compounds as a source material. The a-C:F films could be grown from C4F8 at a high deposition rate (above 400 nm/min) and they were thermally stable up to 300 °C. The addition of bias power to the substrate made it possible to completely fill gaps in the wiring (space 0.35 μm, height 0.65 μm) with the a-C:F film. To protect the a-C:F film during further processing, we deposited a SiO2 film to add mechanical strength and resistance to the oxygen plasma used to remove resist materials. The adhesion between the a-C:F and SiO2 films was dramatically improved by inserting an adhesion promoter consisting of a-C:H and Si-rich SiO2.

Original languageEnglish
Pages (from-to)165-170
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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