Fluorinated amorphous carbon thin films grown from C 4F 8 for multilevel interconnections of integrated circuits

Kazuhiko Endo, Toru Tatsumi

Research output: Contribution to journalArticlepeer-review

Abstract

Fluorinated amorphous carbon thin films (a-C:F) for use as low-dielectric-constant (low-k) interlayer dielectrics were deposited by helicon-wave Plasma-Enhanced Chemical Vapor Deposition (PECVD) using fluorocarbon compounds as a source material. The a-C:F films could be grown from C 4F S at a high deposition rate (above 400 nm/min) and they were thermally stable up to 300°C. The addition of bias power to the substrate made it possible to completely fill gaps in the wiring (space 0.35 μm. height 0.65 μm) with the a-C:F film. To protect the a-C:F film during further processing, we deposited an SiO 2 film to add mechanical strength and resistance to the oxygen plasma used to remove resist materials. The adhesG-Cion between the a-C:F and SiO 2 films was dramatically improved by inserting an adhesion promoter consisting of a-C:H and Si-rich SiO 2.

Original languageEnglish
Pages (from-to)287-292
Number of pages6
JournalNEC Research and Development
Volume38
Issue number3
Publication statusPublished - 1997 Dec 1
Externally publishedYes

Keywords

  • Fluorinated amorphous carbon
  • Low-dielectric-constant (low-k) interlayer dielectrics
  • Multilevel interconnection
  • Plasma-Enhanced Chemical Vapor Deposition (PECVD)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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