Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Kazuhiko Endo, Toru Tatsumi

Research output: Contribution to journalArticlepeer-review

162 Citations (Scopus)

Abstract

Fluorinated amorphous carbon films were proposed as low dielectric constant interlayer dielectrics for ultralarge scale integration circuits. The films were deposited by plasma enhanced chemical vapor deposition with CH4 and CF4 in a parallel plate rf (13.56 MHz) reactor. The dielectric constant of the amorphous carbon films deposited with CH4 was increased with increases in rf power. The addition of CF4 to CH 4 raised the deposition rate and reduced the dielectric constant. At an rf power of 200 W, and at a flow rate of 47 sccm for CF4 and 3 sccm for CH4, the dielectric constant of the fluorinated amorphous carbon films was 2.1.

Original languageEnglish
Pages (from-to)1370-1372
Number of pages3
JournalJournal of Applied Physics
Volume78
Issue number2
DOIs
Publication statusPublished - 1995 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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