Abstract
Geometric structures for HfSiON/SiON/Si films annealed at various N 2 gas partial pressures were investigated using fluorescence XAFS measurement at Hf LIII- and LI-edge. The XAFS analysis has revealed that the local structures around the Hf atoms strongly depend on the N2 gas partial pressure. For the sample annealed at the N2 gas partial pressure of 10 Torr HfN and HfSiON coexist, and for the samples annealed at the N2 gas partial pressure above 100 Torr Hf atoms form HfSiON only. These results indicate that the formation of HfN for HfSiON/SiON/Si films can be suppressed by annealing at proper partial pressure of N 2 gas.
| Original language | English |
|---|---|
| Article number | 012116 |
| Journal | Journal of Physics: Conference Series |
| Volume | 190 |
| DOIs | |
| Publication status | Published - 2009 Jan 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Ofuchi, H., Toyoda, S., Ikeda, K., Liu, L., Liu, Z., & Oshima, M. (2009). Fluorescence XAFS study of local structures in high-k gate dielectrics HfSiON/SiON/Si annealed at various nitrogen gas partial pressure. Journal of Physics: Conference Series, 190, [012116]. https://doi.org/10.1088/1742-6596/190/1/012116