Fluorescence extended x-ray absorption fine structure study on local structures around Mn atoms in thin (In,Mn)As layer and (In,Mn)As quantum dots

H. Ofuchi, T. Kubo, M. Tabuchi, Y. Takeda, F. Matsukura, S. P. Guo, A. Shen, H. Ohno

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

We have investigated thin (In, Mn)As layer and (In, Mn)As quantum dots (with Mn mole fraction lower than 0.02) on GaAs(001) by fluorescence extended x-ray absorption fine structure (EXAFS) in order to study the local structures formed around the Mn atoms. The EXAFS analysis revealed that in a 10 nm thick (In, Mn)As layer, the In-site substitutional Mn and the NiAs-type MnAs coexisted, while the majority of the Mn atoms were substituted in the In-sites of InAs in (In, Mn)As quantum dots. It is considered that different growth modes for the thin layer and the quantum dots affect the local structures.

Original languageEnglish
Pages (from-to)66-70
Number of pages5
JournalJournal of Applied Physics
Volume89
Issue number1
DOIs
Publication statusPublished - 2001 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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