We have investigated thin (In, Mn)As layer and (In, Mn)As quantum dots (with Mn mole fraction lower than 0.02) on GaAs(001) by fluorescence extended x-ray absorption fine structure (EXAFS) in order to study the local structures formed around the Mn atoms. The EXAFS analysis revealed that in a 10 nm thick (In, Mn)As layer, the In-site substitutional Mn and the NiAs-type MnAs coexisted, while the majority of the Mn atoms were substituted in the In-sites of InAs in (In, Mn)As quantum dots. It is considered that different growth modes for the thin layer and the quantum dots affect the local structures.
ASJC Scopus subject areas
- Physics and Astronomy(all)