Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates

T. Matsukawa, K. Fukuda, Y. X. Liu, K. Endo, J. Tsukada, Y. Ishikawa, H. Yamauchi, S. O'Uchi, S. Migita, W. Mizubayashi, Y. Morita, H. Ota, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Fluctuation in drain induced barrier lowering (DIBL) has been investigated in detail for FinFETs with regard to work function variation (WFV) in the metal gates (MGs). The FinFETs with a polycrystalline TiN MG exhibit significantly larger fluctuation in DIBL than that for an amorphous TaSiN MG because of the WFV. The granular WFV of TiN was modeled using 3D TCAD simulation. By reproducing the DIBL fluctuation caused by the WFV, mechanism of how the WFV causes the DIBL fluctuation is discussed.

Original languageEnglish
Title of host publicationProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
PublisherIEEE Computer Society
ISBN (Print)9781479922178
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
Event2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan, Province of China
Duration: 2014 Apr 282014 Apr 30

Publication series

NameProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Other

Other2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
CountryTaiwan, Province of China
CityHsinchu
Period14/4/2814/4/30

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Science Applications

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