Flower-structured InGaN/GaN quantum-well nanodisk crystals on micromachined Si pillars

R. Ito, F. R. Hu, K. Ochi, Y. Zhao, K. Hane

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Periodic Si pillars were fabricated by Si-micromachining and unique flower-structured InGaN/GaN quantum-well nanodick crystals were deposited on the Si pillars. Split photoluminescence peak positions indicated stronger emission from the high In included quantum dots, as compared with the emission from the quantum-well matrix layers. Optical microscopy images indicate clear vertical and horizontal photoluminescence distributions of the flower structure on the pillared Si substrate.

Original languageEnglish
Title of host publication2007 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OMENS
Pages183-184
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OMENS - Hualien, Taiwan, Province of China
Duration: 2007 Aug 122007 Aug 16

Publication series

Name2007 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OMENS

Other

Other2007 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OMENS
CountryTaiwan, Province of China
CityHualien
Period07/8/1207/8/16

Keywords

  • InGaN/GaN
  • Nanodisk
  • Photoluminescence
  • Quantum well

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Flower-structured InGaN/GaN quantum-well nanodisk crystals on micromachined Si pillars'. Together they form a unique fingerprint.

Cite this