TY - JOUR
T1 - Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration
AU - Usami, Noritaka
AU - Kitamura, Masayuki
AU - Sugawara, Takamasa
AU - Kutsukake, Kentaro
AU - Ohdaira, Keisuke
AU - Nose, Yoshitaro
AU - Fujiwara, Kozo
AU - Shishido, Toetsu
AU - Nakajima, Kazuo
PY - 2005/6/24
Y1 - 2005/6/24
N2 - We attempted to grow Si bicrystals with a controlled grain boundary configuration using a pair of single-crystal seeds, which was purposely designed to have a specified character. The floating zone technique under an ultrahigh-vacuum environment was exploited to grow bicrystals and the growth rate was found to be important to control the grain boundary configuration. The grown bicrystals are useful for the fundamental study of the role of grain boundaries, which might control the overall properties of multicrystals. As one of the examples, a series of Si bicrystals, which were grown using seed crystals with a specified misorientation from Σ3, was processed in solar cells, and the short-circuit current density was found to be strongly affected by the misorientation given to the seed.
AB - We attempted to grow Si bicrystals with a controlled grain boundary configuration using a pair of single-crystal seeds, which was purposely designed to have a specified character. The floating zone technique under an ultrahigh-vacuum environment was exploited to grow bicrystals and the growth rate was found to be important to control the grain boundary configuration. The grown bicrystals are useful for the fundamental study of the role of grain boundaries, which might control the overall properties of multicrystals. As one of the examples, a series of Si bicrystals, which were grown using seed crystals with a specified misorientation from Σ3, was processed in solar cells, and the short-circuit current density was found to be strongly affected by the misorientation given to the seed.
KW - Bicrystals
KW - Floating zone growth
KW - Grain boundary
KW - Si
KW - Solar cell
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U2 - 10.1143/JJAP.44.L778
DO - 10.1143/JJAP.44.L778
M3 - Article
AN - SCOPUS:32044441221
VL - 44
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 24-27
ER -