Floating zone growth of β-Ga2O3: A new window material for optoelectronic device applications

Y. Tomm, J. M. Ko, Akira Yoshikawa, T. Fukuda

Research output: Contribution to journalArticlepeer-review

126 Citations (Scopus)

Abstract

β-Ga2O3 is a transparent oxide and intrinsically an insulator. Doping allows the variation of the conductivity for both p- and n-type over a wide range. There are a number of potential applications in optoelectronics such as insulating or conductive window material, or as a substrate. Consequently, the influence of doping on the electrical and optical properties is an issue of crucial importance for pushing this material forward to applications. We report on the successful growth of undoped, Ge- and Ti-doped β-Ga2O3 single crystals by the floating zone technique. Both electrical and optical properties were characterized.

Original languageEnglish
Pages (from-to)369-374
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume66
Issue number1-4
DOIs
Publication statusPublished - 2001 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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