Floating zone growth and scintillation properties of undoped and Ce-doped GdTaO4 crystals

D. Nakauchi, M. Koshimizu, G. Okada, T. Yanagida

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Undoped and Ce-doped GdTaO4 single crystals with different Ce concentration were grown by the floating zone method. By X-ray diffraction analysis, we confirmed all the grown crystals do not have any impurity phases. In X-ray induced scintillation spectra, the undoped sample shows a broad emission band around 300–700 nm, and the decay time of this emission is around 500 ns In Ce-doped samples, emissions are observed around 400–700 nm, and the decay time constants are around 50 ns which is a typical value of the 5d-4f transitions of Ce3+. In order to reveal the detailed scintillating behaviors, we measured the temperature dependence of X-ray induced scintillation spectra and revealed the energy transfer mechanisms between two different excited states of luminescent centers.

Original languageEnglish
Pages (from-to)129-133
Number of pages5
JournalRadiation Measurements
Volume106
DOIs
Publication statusPublished - 2017 Nov

Keywords

  • Floating zone method
  • GdTaO4
  • Scintillation
  • Single crystal
  • Thermally stimulated luminescence

ASJC Scopus subject areas

  • Radiation
  • Instrumentation

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