@inproceedings{97628a68b5be41749c674097d76bc301,
title = "Floating gate type SOI-FinFET flash memories with different channel shapes and interpoly dielectric materials",
abstract = "The floating gate (FG)-type silicon-on-insulator (SOI)-FinFET flash memories with triangular-fin (TF) and rectangular-fin (RF) channels and with different interpoly dielectric (IPD) materials have been successfully fabricated using (100)- and (110)-oriented SOI wafers and orientation dependent wet etching. The electrical characteristics of the fabricated FG-type SOI-FinFET flash memories including threshold voltage (Vt) variability, program/erase (P/E) speed, memory window, endurance, and data retention at room temperature and 85°C have been comparatively investigated. It was experimentally found that the TF channel flash memory with an Al2O3-nitride-oxide (ANO) IPD layer shows a higher P/E speed, a larger memory window, and a lower-voltage operation as compared to the RF channel flash memories with the same ANO IPD layer. Such a high performance of the TF-ANO flash memory is due to the high-k effect of the Al2O3 layer and the electric field enhancement at the sharp foot edges of the TF.",
author = "Liu, {Y. X.} and T. Nabatame and T. Matsukawa and K. Endo and S. O'Uchi and W. Mizubayashi and Y. Morita and S. Migita and H. Ota and T. Chikyow and M. Masahara",
year = "2016",
month = jan,
day = "1",
doi = "10.1149/07202.0011ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "11--24",
editor = "Obeng, {Y. S.} and H. Iwai and Z. Chen and D. Bauza and Sundaram, {K. B.} and T. Chikyow and D. Misra",
booktitle = "Dielectrics for Nanosystems 7",
edition = "2",
note = "Symposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting ; Conference date: 29-05-2016 Through 02-06-2016",
}