Floating gate type SOI-FinFET flash memories with different channel shapes and interpoly dielectric materials

Y. X. Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'Uchi, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The floating gate (FG)-type silicon-on-insulator (SOI)-FinFET flash memories with triangular-fin (TF) and rectangular-fin (RF) channels and with different interpoly dielectric (IPD) materials have been successfully fabricated using (100)- and (110)-oriented SOI wafers and orientation dependent wet etching. The electrical characteristics of the fabricated FG-type SOI-FinFET flash memories including threshold voltage (Vt) variability, program/erase (P/E) speed, memory window, endurance, and data retention at room temperature and 85°C have been comparatively investigated. It was experimentally found that the TF channel flash memory with an Al2O3-nitride-oxide (ANO) IPD layer shows a higher P/E speed, a larger memory window, and a lower-voltage operation as compared to the RF channel flash memories with the same ANO IPD layer. Such a high performance of the TF-ANO flash memory is due to the high-k effect of the Al2O3 layer and the electric field enhancement at the sharp foot edges of the TF.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 7
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
EditorsY. S. Obeng, H. Iwai, Z. Chen, D. Bauza, K. B. Sundaram, T. Chikyow, D. Misra
PublisherElectrochemical Society Inc.
Pages11-24
Number of pages14
Edition2
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes
EventSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting - San Diego, United States
Duration: 2016 May 292016 Jun 2

Publication series

NameECS Transactions
Number2
Volume72
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting
CountryUnited States
CitySan Diego
Period16/5/2916/6/2

ASJC Scopus subject areas

  • Engineering(all)

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