Floating gate memory with biomineralized nanodots embedded in HfO 2

Kosuke Ohara, Yosuke Tojo, Ichiro Yamashita, Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru, Yukiharu Uraoka

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    Memory properties of a nanodot-type floating gate memory with Co-bio-nanodots (Co-BNDs) embedded in HfO2 were investigated. High density and uniform Co-BNDs were adsorbed on a HfO2 tunnel oxide using ferritin. The fabricated MOS capacitor exhibited a capacitance-voltage curve with large hysteresis. The memory window size was 30 times larger than that of the MOS capacitor with an SiO2 gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for an MOS field-effect transistor. The high-performance nanodot-type floating gate memory was first fabricated at low temperature by utilizing supramolecular protein.

    Original languageEnglish
    Article number5491186
    Pages (from-to)576-581
    Number of pages6
    JournalIEEE Transactions on Nanotechnology
    Volume10
    Issue number3
    DOIs
    Publication statusPublished - 2011 May 1

    Keywords

    • Bio-nano process
    • MOS devices
    • ferritin
    • floating gate memory
    • high-$k$

    ASJC Scopus subject areas

    • Computer Science Applications
    • Electrical and Electronic Engineering

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