Floating gate memory with biomineralized nanodots embedded in HfO 2

Kosuke Ohara; Yosuke Tojo; Ichiro Yamashita; Toshitake Yaegashi; Masahiro Moniwa; Masaki Yoshimaru; Yukiharu Uraoka

doi:10.1109/TNANO.2010.2053852

Floating gate memory with biomineralized nanodots embedded in HfO ₂

Kosuke Ohara, Yosuke Tojo, Ichiro Yamashita, Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru, Yukiharu Uraoka

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Memory properties of a nanodot-type floating gate memory with Co-bio-nanodots (Co-BNDs) embedded in HfO₂ were investigated. High density and uniform Co-BNDs were adsorbed on a HfO₂ tunnel oxide using ferritin. The fabricated MOS capacitor exhibited a capacitance-voltage curve with large hysteresis. The memory window size was 30 times larger than that of the MOS capacitor with an SiO₂ gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for an MOS field-effect transistor. The high-performance nanodot-type floating gate memory was first fabricated at low temperature by utilizing supramolecular protein.

Original language	English
Article number	5491186
Pages (from-to)	576-581
Number of pages	6
Journal	IEEE Transactions on Nanotechnology
Volume	10
Issue number	3
DOIs	https://doi.org/10.1109/TNANO.2010.2053852
Publication status	Published - 2011 May

Keywords

Bio-nano process
MOS devices
ferritin
floating gate memory
high-$k$

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/TNANO.2010.2053852

Cite this

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title = "Floating gate memory with biomineralized nanodots embedded in HfO 2",

abstract = "Memory properties of a nanodot-type floating gate memory with Co-bio-nanodots (Co-BNDs) embedded in HfO2 were investigated. High density and uniform Co-BNDs were adsorbed on a HfO2 tunnel oxide using ferritin. The fabricated MOS capacitor exhibited a capacitance-voltage curve with large hysteresis. The memory window size was 30 times larger than that of the MOS capacitor with an SiO2 gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for an MOS field-effect transistor. The high-performance nanodot-type floating gate memory was first fabricated at low temperature by utilizing supramolecular protein.",

keywords = "Bio-nano process, MOS devices, ferritin, floating gate memory, high-$k$",

author = "Kosuke Ohara and Yosuke Tojo and Ichiro Yamashita and Toshitake Yaegashi and Masahiro Moniwa and Masaki Yoshimaru and Yukiharu Uraoka",

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AU - Ohara, Kosuke

AU - Tojo, Yosuke

AU - Yamashita, Ichiro

AU - Yaegashi, Toshitake

AU - Moniwa, Masahiro

AU - Yoshimaru, Masaki

AU - Uraoka, Yukiharu

PY - 2011/5

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AB - Memory properties of a nanodot-type floating gate memory with Co-bio-nanodots (Co-BNDs) embedded in HfO2 were investigated. High density and uniform Co-BNDs were adsorbed on a HfO2 tunnel oxide using ferritin. The fabricated MOS capacitor exhibited a capacitance-voltage curve with large hysteresis. The memory window size was 30 times larger than that of the MOS capacitor with an SiO2 gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for an MOS field-effect transistor. The high-performance nanodot-type floating gate memory was first fabricated at low temperature by utilizing supramolecular protein.

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