Floating-body effect free concave SOI-MOSFETs (COSMOS)

K. Hieda, S. Takedai, M. Takahashi, M. Yoshimi, H. Takato, A. Nitayama, F. Horiguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In order to overcome the degradation induced by floating body effects and to suppress the increase in parasitic source/drain resistances in thin-film silicon-on-insulator (SOI) MOSFETs, a concave SOI-MOSFET (COSMOS) is proposed. This structure realizes a partially thin-film SOI region, which is used as a fully depleted channel, and thick-film SOI regions, which are used as source/drain. The unique features of the COSMOS are found to be (1) elimination of the floating-body effects, (2) less short channel effect, (3) excellent subthreshold characteristics, and (4) reduction in parasitic source/drain resistances.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages667-670
Number of pages4
ISBN (Electronic)0780302435
DOIs
Publication statusPublished - 1991 Jan 1
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 1991 Dec 81991 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period91/12/891/12/11

Keywords

  • Contact resistance
  • Doping
  • Electric breakdown
  • Immune system
  • Impact ionization
  • Impurities
  • Length measurement
  • MOSFET circuits
  • Threshold voltage
  • Transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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