Flexible low-voltage organic transistors and circuits based on a high-mobility organic semiconductor with good air stability

Ute Zschieschang, Frederik Ante, Tatsuya Yamamoto, Kazuo Takimiya, Hirokazu Kuwabara, Masaaki Ikeda, Tsuyoshi Sekitani, Takao Someya, Klaus Kern, Hagen Klauk

Research output: Contribution to journalArticle

176 Citations (Scopus)

Abstract

Flexible transistore and circuits based on dinaphtho-[2,3-b:2′, 3′-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm2 V-1 s-1 and the ring oscillators have a stage delay of 18 μs. Due to stability of the semiconductor, the devices and circuits maintain 50% of their initial performance for a period of 8 months in ambient air. (Figure Presented)

Original languageEnglish
Pages (from-to)982-985
Number of pages4
JournalAdvanced Materials
Volume22
Issue number9
DOIs
Publication statusPublished - 2010 Mar 5
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    Zschieschang, U., Ante, F., Yamamoto, T., Takimiya, K., Kuwabara, H., Ikeda, M., Sekitani, T., Someya, T., Kern, K., & Klauk, H. (2010). Flexible low-voltage organic transistors and circuits based on a high-mobility organic semiconductor with good air stability. Advanced Materials, 22(9), 982-985. https://doi.org/10.1002/adma.200902740