TY - JOUR
T1 - Flexible air-stable three-dimensional polymer field-effect transistors with high output current density
AU - Nakayama, K.
AU - Ou-Yang, W.
AU - Uno, M.
AU - Osaka, I.
AU - Takimiya, K.
AU - Takeya, J.
N1 - Funding Information:
We acknowledge the New Energy and Industrial Technology Developing Organization (NEDO), the Japan Science and Technology Agency (JST), and the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan for financial support.
PY - 2013
Y1 - 2013
N2 - Flexible air-stable short-channel polymer organic field-effect transistor (OFET) arrays with high saturated output current density are demonstrated by utilizing a novel solution-processed naphthobisthiadiazole (NTz) based donor-acceptor semiconducting polymer (PNTz4T) and designing a three-dimensional vertical channel structure with an extremely large ratio of channel width to channel length. The saturated mean field-effect mobility of 0.16 cm 2/V s of the short-channel polymer devices remains over one month resulting in air-stable OFET arrays with high on/off ratio over 106 and powerful current-density exceeding 0.3 A/cm2 under low operation voltage, both of which meet the requirements for such applications as driving organic light-emitting diodes in active-matrix displays.
AB - Flexible air-stable short-channel polymer organic field-effect transistor (OFET) arrays with high saturated output current density are demonstrated by utilizing a novel solution-processed naphthobisthiadiazole (NTz) based donor-acceptor semiconducting polymer (PNTz4T) and designing a three-dimensional vertical channel structure with an extremely large ratio of channel width to channel length. The saturated mean field-effect mobility of 0.16 cm 2/V s of the short-channel polymer devices remains over one month resulting in air-stable OFET arrays with high on/off ratio over 106 and powerful current-density exceeding 0.3 A/cm2 under low operation voltage, both of which meet the requirements for such applications as driving organic light-emitting diodes in active-matrix displays.
KW - Air-stable
KW - Flexible substrate
KW - High current density
KW - Polymer field-effect transistor
KW - Vertical short channel (3D)
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U2 - 10.1016/j.orgel.2013.08.002
DO - 10.1016/j.orgel.2013.08.002
M3 - Article
AN - SCOPUS:84883706730
SN - 1566-1199
VL - 14
SP - 2908
EP - 2915
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
IS - 11
ER -