Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based Technology

S. O'Uchi, M. Masahara, K. Sakamoto, K. Endo, Y. X. Liu, T. Matsukawa, T. Sekigawa, H. Koike, E. Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

We propose a flex-pass-gate SRAM (Flex-PG SRAM), i.e., a FinFET-based SRAM to enhance both the read and write static noise margins (SNMs) independently. The flip-flop in the Flex-PG SRAM consists of usual FinFETs while its pass gates consist of double-"independent"-gate FinFETs, four-terminal-FinFETs. A TCAD simulation revealed that the Flex-PG SRAM increases the read SNM by 70 mV even when its 6-σ tolerance is ensured, without the cell size penalty and decrease in the write SNM.

Original languageEnglish
Title of host publicationProceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages33-36
Number of pages4
ISBN (Electronic)1424407869, 9781424407866
DOIs
Publication statusPublished - 2007 Jan 1
Externally publishedYes
Event29th Annual IEEE Custom Integrated Circuits Conference, CICC 2007 - San Jose, United States
Duration: 2007 Sep 162007 Sep 19

Publication series

NameProceedings of the IEEE 2007 Custom Integrated Circuits Conference, CICC 2007

Other

Other29th Annual IEEE Custom Integrated Circuits Conference, CICC 2007
CountryUnited States
CitySan Jose
Period07/9/1607/9/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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