Copper surfaces with an initial root mean square roughness of 2-5 nm were processed by a photoemission-assisted plasma ion source. When exposed to Ar+ ion at energy of 26.0 eV and fluence of 3.12 ×1018 ions cm-2, roughness increased from 2.27 ±0.04 to 4.48 ±2.20 nm with crater formation. In contrast, a significant decrease of roughness from 2.89 ±0.07 to 1.37 ±0.08 nm was achieved by irradiating with Xe+ ions at 26.5 eV and 3.12 ×1018 ions cm-2. The whole surface of a 3 inch Cu/Si wafer was successfully flattened by irradiation with 26.5 eV Xe+ ions from 4.14 ±0.16 to 1.95 ±0.17 nm.
ASJC Scopus subject areas
- Physics and Astronomy(all)