TY - JOUR
T1 - Flattening of copper surfaces with a low energy xenon-ion source generated by photoemission-assisted plasma
AU - Ajia, Saijian
AU - Ogawa, Shuichi
AU - Kamata, Nobuhisa
AU - Takakuwa, Yuji
N1 - Funding Information:
This work was supported by JSPS KAKENHI Grant Nos. JP16K14124 and JP15J05004, USHIO Foundation Scholarship, and Iketani Science and Technology Foundation. A part of this study was supported by the Tohoku University nanofabrication platform in nanotechnology platform project and Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials from the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT). The AFM measurements were performed at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University.
Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019
Y1 - 2019
N2 - Copper surfaces with an initial root mean square roughness of 2-5 nm were processed by a photoemission-assisted plasma ion source. When exposed to Ar+ ion at energy of 26.0 eV and fluence of 3.12 ×1018 ions cm-2, roughness increased from 2.27 ±0.04 to 4.48 ±2.20 nm with crater formation. In contrast, a significant decrease of roughness from 2.89 ±0.07 to 1.37 ±0.08 nm was achieved by irradiating with Xe+ ions at 26.5 eV and 3.12 ×1018 ions cm-2. The whole surface of a 3 inch Cu/Si wafer was successfully flattened by irradiation with 26.5 eV Xe+ ions from 4.14 ±0.16 to 1.95 ±0.17 nm.
AB - Copper surfaces with an initial root mean square roughness of 2-5 nm were processed by a photoemission-assisted plasma ion source. When exposed to Ar+ ion at energy of 26.0 eV and fluence of 3.12 ×1018 ions cm-2, roughness increased from 2.27 ±0.04 to 4.48 ±2.20 nm with crater formation. In contrast, a significant decrease of roughness from 2.89 ±0.07 to 1.37 ±0.08 nm was achieved by irradiating with Xe+ ions at 26.5 eV and 3.12 ×1018 ions cm-2. The whole surface of a 3 inch Cu/Si wafer was successfully flattened by irradiation with 26.5 eV Xe+ ions from 4.14 ±0.16 to 1.95 ±0.17 nm.
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U2 - 10.7567/1347-4065/ab3878
DO - 10.7567/1347-4065/ab3878
M3 - Article
AN - SCOPUS:85072794940
SN - 0021-4922
VL - 58
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 9
M1 - 090911
ER -