Flat-lying semiconductor-insulator interfacial layer in DNTT thin films

Min Cherl Jung, Matthew R. Leyden, Gueorgui O. Nikiforov, Michael V. Lee, Han Koo Lee, Tae Joo Shin, Kazuo Takimiya, Yabing Qi

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The molecular order of organic semiconductors at the gate dielectric is the most critical factor determining carrier mobility in thin film transistors since the conducting channel forms at the dielectric interface. Despite its fundamental importance, this semiconductor-insulator interface is not well understood, primarily because it is buried within the device. We fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) thin film transistors by thermal evaporation in vacuum onto substrates held at different temperatures and systematically correlated the extracted charge mobility to the crystal grain size and crystal orientation. As a result, we identify a molecular layer of flat-lying DNTT molecules at the semiconductor-insulator interface. It is likely that such a layer might form in other material systems as well, and could be one of the factors reducing charge transport. Controlling this interfacial flat-lying layer may raise the ultimate possible device performance for thin film devices.

Original languageEnglish
Pages (from-to)1833-1840
Number of pages8
JournalACS Applied Materials and Interfaces
Volume7
Issue number3
DOIs
Publication statusPublished - 2015 Jan 28
Externally publishedYes

Keywords

  • AFM
  • DNTT
  • GIXD
  • NEXAFS
  • vacuum evaporation

ASJC Scopus subject areas

  • Materials Science(all)

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  • Cite this

    Jung, M. C., Leyden, M. R., Nikiforov, G. O., Lee, M. V., Lee, H. K., Shin, T. J., Takimiya, K., & Qi, Y. (2015). Flat-lying semiconductor-insulator interfacial layer in DNTT thin films. ACS Applied Materials and Interfaces, 7(3), 1833-1840. https://doi.org/10.1021/am507528e