First principles study on the strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO2 interface in V-MOSFET

Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai, Hiroyuki Kageshima, Tetsuo Endoh, Kenji Shiraishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

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Engineering & Materials Science