First principles study on the strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO2 interface in V-MOSFET

Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai, Hiroyuki Kageshima, Tetsuo Endoh, Kenji Shiraishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Gate insulator of vertical MOSFET (V-MOSFET) is formed by silicon oxide. However, Si pillar cannot keep the structure during oxidation process because the Si atoms disappear from bulk (missing-Si). Moreover, the effect of hydrogen annealing for VMOSFET under the typical condition becomes weaker than that for planer MOSFET. In this study, we revealed the physical origin of missing-Si and hydrogen annealing effects by using first principles calculation method. We considered that the strain which is accumulated at the Si/SiO2 interface in V-MOSFET due to pillar structures. In this study, we clarified the strain dependence of thermal oxidation of V-MOSFET based on the Si-emission model [1,2]. The obtained results indicate that the compressive strain is one of the causes of the missing-Si. Furthermore, we investigated the strain dependence of the effect of hydrogen annealing. As a result, we revealed that hydrogen annealing temperature of VMOSFET should be lower than that of planer-MOSFET.

Original languageEnglish
Title of host publicationSemiconductors, Dielectrics, and Metals for Nanoelectronics 14
EditorsK. Kita, S. Kar, D. Landheer, D. Misra
PublisherElectrochemical Society Inc.
Pages293-299
Number of pages7
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
EventSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number5
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

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    Kawachi, S., Shirakawa, H., Araidai, M., Kageshima, H., Endoh, T., & Shiraishi, K. (2016). First principles study on the strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO2 interface in V-MOSFET. In K. Kita, S. Kar, D. Landheer, & D. Misra (Eds.), Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 (5 ed., pp. 293-299). (ECS Transactions; Vol. 75, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/07505.0293ecst