First-principles study of excess Si-atom stability around Si-oxide/Si interfaces

Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, Kenji Shiraishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The stability of excess Si around the Si-oxide/Si interfaces is studied using the first-principles calculation. The excess Si is suggested to flow into the oxide from the substrate. The excess Si flowing into the oxide becomes SiO interstitials with the O-vacancy-like structure, which can be one of the sources of the E'-centers or the charge traps in the oxide. This Si flow is expected to be rather easier because SiO interstitials can be created via a simple rebonding procedure in the oxide.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages389-390
Number of pages2
DOIs
Publication statusPublished - 2005 Jun 30
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 2004 Jul 262004 Jul 30

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period04/7/2604/7/30

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'First-principles study of excess Si-atom stability around Si-oxide/Si interfaces'. Together they form a unique fingerprint.

Cite this