First-principles plane-wave pseudopotential calculations were performed to study electronic structures, structural relaxation, and energetics of point defects in Ti-doped Al2O3. Substitutional and interstitial Ti ions with charge compensating intrinsic defects were considered, and their formation energies were evaluated under various atomic chemical potentials. It was found that substitutional Ti4+ ions with charge compensating Al vacancies were most stable in the oxidized condition. In contrast, as oxygen chemical potentials decreased, the formation energy of substitutional Ti3+ decreased to have the smallest value in the relatively reduced conditions. However, in the intermediate range of oxygen potentials, substitutional Ti3+ and Ti4+ exhibited similar formation energies, indicating that these Ti defects can coexist in a particular reduction environment.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2003 Dec 9|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics