First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high- k dielectrics

N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, T. Arikado

Research output: Contribution to journalArticlepeer-review

145 Citations (Scopus)

Abstract

The atomistic effects of N atoms on the leakage current through Hf O2 high- k gate dielectrics have been studied from first-principles calculations within the framework of a generalized gradient approximation (GGA). It has been found that the intrinsic effects of N atoms drastically reduce the electron leakage current. N atoms couple favorably with oxygen vacancies (VO) in Hf O2 and extract electrons from VO. As a result, VO energy levels are drastically elevated due to the charged-state change in VO from neutral (VO0) to positively charged (VO 2+). Accordingly, N incorporation removes the electron leakage path mediated by VO related gap states.

Original languageEnglish
Article number143507
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number14
DOIs
Publication statusPublished - 2005 Apr 4

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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