First principles guiding principles for the switching process in oxide ReRAM

K. Shiraishi, M. Y. Yang, K. Kamiya, B. Magyari-Kope, Masaaki Niwa, Yoshio Nishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

First principles calculations became crucial techniques for designing future electronics engineering. In this paper, we describe the typical examples which aim the designing of future electron devices such as modern resistive random access memories (ReRAM) by using the knowledge obtained by the first principles calculations.

Original languageEnglish
Title of host publicationICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs
Publication statusPublished - 2012 Dec 1
Externally publishedYes
Event2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China
Duration: 2012 Oct 292012 Nov 1

Publication series

NameICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
CountryChina
CityXi'an
Period12/10/2912/11/1

ASJC Scopus subject areas

  • Human-Computer Interaction
  • Electrical and Electronic Engineering

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    Shiraishi, K., Yang, M. Y., Kamiya, K., Magyari-Kope, B., Niwa, M., & Nishi, Y. (2012). First principles guiding principles for the switching process in oxide ReRAM. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings [6467648] (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6467648