First principles calculations of solution energies of dopants around stacking faults in Si crystal

Yosuke Yamamoto, Kensuke Togase, Yutaka Ohno, Ichiro Yonenaga, Shigeto R. Nishitani

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

First principles calculations were performed to investigate the recent transmission electron microscopic observations of the dislocation cores of heavily doped n-and p-type Si crystals. Segregations around the stacking fault region of p-type (Ga, Al, In) and n-type (P, As, Sb) dopants were confirmed by the solution energy differences of the location sites between the perfect lattice and stacking fault. These solution energy changes are caused not by the interlayer relaxations around the dopants but by the electronic structure changes near the band gaps.

Original languageEnglish
Article number061302
JournalJapanese journal of applied physics
Volume53
Issue number6
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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